The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1980
Filed:
Jan. 16, 1979
Applicant:
Inventors:
Francois M Klaassen, Eindhoven, NL;
Johannes A Appels, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 13 ; 357 55 ;
Abstract
A field effect transistor of the V-MOST type in which the channel region comprises a more highly doped part which adjoins the source zone and a lower doped part which surrounds said region, said channel region adjoining the surface and surrounded by an insulation diffusion. The lower-doped part is depleted from the pn junction with the low-doped drain region up to the surface at a voltage which is lower than the breakdown voltage.
Klaassen, Francois. (1980). Field effect transistor with insulated gate electrode (U.S. Patent No. 4233617). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4233617
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile