The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1980
Filed:
May. 30, 1978
Applicant:
Inventors:
Mikio Kyomasu, Itami, JP;
Yoshiharu Nakao, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 13 ; 357-4 ;
Abstract
In the disclosed FAMOS semiconductor non-volatile memory a source and a drain region of the p.sup.+ type are disposed in an n semiconductor layer to form a gate region between them. The main face of the semiconductor layer is coated with a silicon dioxide film in which a polycrystalline silicon gate is buried to bridge the source and drain regions. An n.sup.+ type high doped semiconductor region is disposed in the semiconductor layer only under the silicon gate to form a pn junction with the drain region. Thus the pn junction is normal to the main face of the semiconductor layer.