The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1980
Filed:
Sep. 12, 1979
Applicant:
Inventors:
Jeffrey J Harris, Crawly, GB;
Colin E Wood, Freeville, NY (US);
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 148-15 ; 148174 ; 156606 ; 156610 ; 427 85 ; 427 87 ;
Abstract
A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by directing molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substrate. It has not proved practicable to grow an n-type GaAs layer by molecular beam epitaxy using S, Se or Te as dopant in the form of a molecular beam consisting of elemental S, Se or Te.