The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 1980
Filed:
Dec. 20, 1978
Adrian R Hartman, New Providence, NJ (US);
Terence J Riley, Warren, NJ (US);
Peter W Shackle, Bridgewater, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zones constituting emitter (19), (23), base (16), (20) and collector zones (17), (21). In one embodiment using high resistivity (75-300 ohm cm) silicon, referred to as .pi. material, for the material of the pocket, one transistor is a PN.pi.P device, and the other is an NP.pi.N. In the PN.pi.P the reverse-biased base-collector pn junction is the interface between the N base zone (16) and the .pi. portion (12) of the collector zone. In the NP.pi.N transistor the base-collector junction is the interface between the lightly doped .pi. extension (14) of the base zone (20) and the N collector zone (21). A connection (32) is provided to the conductive substrate to enable application of a suitable potential thereto.