The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1980
Filed:
Apr. 02, 1979
Applicant:
Inventors:
Hing C Chu, Liverpool, NY (US);
Y S Sun, Liverpool, NY (US);
Assignee:
General Electric Company, Auburn, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
430296 ; 430319 ; 148-15 ; 148187 ; 2504 / ; 2504 / ;
Abstract
An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.
Chu, Hing. (1980). Control of valley current in a unijunction transistor by electron (U.S. Patent No. 4230791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4230791
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile