The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1980
Filed:
May. 25, 1979
Applicant:
Inventor:
Alan L Harrington, Glendale, CA (US);
Assignee:
TRW Inc., Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
428162 ; 29413 ; 29580 ; 148 332 ; 357 54 ; 357 55 ; 357 59 ; 428167 ; 428173 ;
Abstract
Flat and parallel depositions of low pressure chemical vapor deposited (LPCVD) polycrystalline intrinsic silicon are formed on both sides of a wafer of P-I-N <100> substrate of silicon to support the wafer during subsequent polish removal from the top surface. This structurally reinforces the crystal wafer and helps prevent warpage and cracking during subsequent handling.