The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 1980

Filed:

Jan. 29, 1979
Applicant:
Inventors:

Robert L Hartman, Warren Township, Somerset County, NJ (US);

Louis A Koszi, Scotch Plains, NJ (US);

Cyril J Mogab, Berkeley Heights, NJ (US);

Bertram Schwartz, Westfield, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
204 15 ; 29572 ; 29578 ; 29579 ; 156643 ; 156648 ; 156655 ; 156662 ; 204 23 ; 204 / ; 204 / ; 2041 / ;
Abstract

Plasma etching is described as a selective etch for dielectric masks such as SiO.sub.2, Si.sub.3 N.sub.4 and certain photoresists in the presence of native oxides of Group III-V compound semiconductors. This process can be used in the fabrication of mesa junction lasers and Burrus light emitting diodes.


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