The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1980
Filed:
Jul. 31, 1978
Applicant:
Inventor:
Cyril J Mogab, Berkeley Heights, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156656 ; 156657 ; 156662 ; 156665 ; 2041 / ; 252 791 ; 1566591 ;
Abstract
Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect--the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis.