The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1980

Filed:

Jul. 07, 1978
Applicant:
Inventor:

Manfred Mauthe, Munich, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin & Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H03K / ;
U.S. Cl.
CPC ...
357 41 ; 357 23 ; 357 24 ; 357 54 ; 357 91 ; 307238 ; 365149 ;
Abstract

A storage element comprises a storage capacitor which has a storage electrode, arranged insulated over a doped semiconductor layer, connected to a constant voltage, and a selection element which manifest a gate connected to a word line, arranged in an insulated manner above the semiconductor layer. A source zone connected to a bit line is oppositely doped and arranged at the surface of the semiconductor layer. The selection element selectively connects the source zone to a surface storage region of the semiconductor layer which is disposed beneath the storage electrode. Between the storage electrode and the semiconductor layer an insulated electrode is provided and the semiconductor layer is additionally p-doped and n-doped in a zone beneath a portion, adjacent the selection element, of the electrode and an overflow electrode and an oppositely doped drain zone are provided on the side of the electrode opposite the selection element.


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