The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1980
Filed:
May. 23, 1978
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 41 ; 357 68 ;
Abstract
Self-aligned IGFET structure having a source region, a drain region and a gate electrode placed between the source and drain regions to define a channel region. The gate electrode is provided with an extended end portion on a relatively thick field oxide layer and having a length no less than a predetermined channel length on one side of the channel region so that the breakdown voltage is not decreased on that one side of the channel region.