The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1980
Filed:
Oct. 25, 1978
Earl C Vickery, San Jose, CA (US);
James C Schmoock, San Jose, CA (US);
Clyde M Brown, Jr, San Jose, CA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A semiconductor voltage reference device formed by ion implanting particles into a semiconductor body having first and second doped regions of opposite type conductivity formed therein. Such particles are implanted with a peak concentration at a predetermined depth from a surface of the body, providing a third region of conductivity type opposite that of the first region and having a doping concentration greater than that of the second region. The particles extend beneath the surface of the body into the first and second regions, a junction being formed between the first and third regions beneath the surface of the body. Electrodes are provided in ohmic contact with the first and second doped regions. When the junction is reverse biased by applying a proper voltage across the electrodes the junction breaks down beneath the surface of the body establishing a fixed or reference voltage between the electrodes.