The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1980

Filed:

Jun. 01, 1979
Applicant:
Inventors:

Masaharu Kohyama, Mobara, JP;

Tadashi Ishibashi, Mobara, JP;

Rokuro Watanabe, Mobara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
156 99 ; 156101 ; 156250 ; 428 44 ; 428 45 ;
Abstract

A method for producing liquid crystal cells is disclosed, in which a pair of large-area glass substrates are put together, opposite to each other and spaced a small distance apart from each other to form integrally a plurality of liquid crystal cells between the substrates, and by splitting the glass substrate assembly, the individual cells are separated from one another. Each of the glass substrates, which have the same structure, has first regions to serve as upper substrate sections and second regions to serve as lower substrate sections disposed alternately thereon and predetermined electrodes are formed on the first and the second regions. The two glass substrates are disposed face to face with each other in such a manner that the first and the second regions of one substrate are opposite to the second and the first regions of the other substrate. The splitting operation is performed by placing the glass substrate assembly on two parallel supports and by subjecting the assembly to bending distortion by applying a pressing force. The pressing force is determined depending on the relationship between the distance between the supports and the degree of the bending distortion.


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