The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1980
Filed:
Dec. 21, 1978
Keiji Nishimoto, Yokohama, JP;
Shinpei Tanaka, Yokohama, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
In a process for producing a semiconductor device having a protecting glass film containing an impurity of a first conductivity type, a masking film is formed on the surface of at least a portion of a region of a second conductivity type opposite to the first conductivity type, this region being within a semiconductor substrate. The masking film is not etched by an etching agent for the protecting glass film and prevents the impurity issuing out of the protecting glass film from entering into the region when the surface of the protecting glass film is smoothed by heating it. After the heating treatment the masking film is at least partly removed to make the window for an electrode contact to the region of the second conductivity type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile