The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1980
Filed:
Nov. 14, 1978
Vladimir Rumennik, El Segundo, CA (US);
International Rectifier Corporation, Los Angeles, CA (US);
Abstract
A fast recovery diode consists of a relatively thick wafer of monocrystalline silicon material which has a relatively deep central well therein. The central well defines a relatively thin intermediate base region for the diode which is surrounded by a relatively thick rim region which imparts physical strength to the wafer. The upper periphery of the rim is surrounded by a conductivity-type material which is opposite to that of the base, but is short-circuited by the contact on the well side of the wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile