The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1980
Filed:
Oct. 13, 1978
Theodorus G van Oirschot, Eindhoven, NL;
Willem J Leswin, Eindhoven, NL;
Petrus J Thijs, Eindhoven, NL;
Willem Nijman, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device having a monocrystalline substrate and a plurality of epitaxial layers successively deposited on the substrate is disclosed. The device is manufactured by successively contacting the substrate with solutions which are previously saturated by contact with a plurality of auxiliary substrates, in a process in which the monocrystalline substrate, the auxiliary substrates and the solutions are cooled before the layers are deposited. The method includes the steps of contacting a first auxiliary substrate with a first solution, contacting a second auxiliary substrate with this first solution while simultaneously contacting the first auxiliary substrate with a second solution, contacting the monocrystalline substrate with the first solution to deposit a first layer thereon while simultaneously contacting a second auxiliary substrate with the second solution, and then contacting the monocrystalline with the second solution to deposit a second layer thereon. The total contact time of each solution with the auxiliary substrates is not limited to the time of a single contact of the monocrystalline substrate with any solution. In this matter, the solubility times for the auxiliary substrates need not be limited to the epitaxial layer growth time of the monocrystalline substrate, thus resulting in an improved and more flexible manufacturing process.