The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1980
Filed:
Aug. 30, 1977
Applicant:
Inventor:
Arthur C Adams, Berkeley Heights, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 85 ; 427 95 ; 148174 ;
Abstract
A method of depositing doped silicon dioxide layers in the fabrication of semiconductor devices has been found. This method entails the reaction of a mixture of silane, nitrous oxide and a source of a dopant, e.g., phosphine or diborane. The reaction is performed at relatively high temperature, typically between 800 and 900 degrees C., and excellent step coverage is obtained. Further, the pinhole problems previously associated with high temperature techniques are avoided. Lower dopant concentrations, e.g., below 6%, are also practical.