The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1980
Filed:
May. 08, 1978
Applicant:
Inventors:
Shinichi Hasegawa, Tsuchiura, JP;
Hisanori Fujita, Tsuchiura, JP;
Assignee:
Mitsubishi Monsanto Chemical Company, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 357 61 ;
Abstract
A method of manufacturing an electroluminescent compound semiconductor wafer having epitaxial film layers each composed of a semiconductor containing components belonging to III and V groups of the periodic table one of which layers has the mixed crystal ratio of the components being constant comprises the step of at least reducing the supply of at least one of the III and V components at least once during the formation of the one layer.