The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1980
Filed:
Dec. 13, 1978
Juergen Graul, Gruenwald, DE;
Helmut Mueller, Fuerstenfeldbruck, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A semiconductor component is described which includes two zones of opposite conductivity type having a pn junction therebetween, and in which one zone is formed of a monocrystalline semiconductor substrate body and the other zone is produced in the semiconductor body by a doping process, such, for example, as by an implantation or diffusing process. Before the diffusion or implantation takes place, a zone is created at or near the substrate surface which has a disturbed crystal lattice. The diffusion or implantation then takes place through the disturbed zone. A process for producing such a semiconductor component is also described. The other zone may also be produced after the disturbed crystal lattice is produced in the portion of the substrate body which portion will later become the second zone.