The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1980
Filed:
Oct. 27, 1977
Applicant:
Inventors:
Manabu Wataze, Amagasaki, JP;
Kazuhisa Takahashi, Amagasaki, JP;
Saburo Takamiya, Amagasaki, JP;
Shigeru Mitsui, Amagasaki, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 56 ; 357 13 ; 357 52 ;
Abstract
A P type semiconductor layer is epitaxially grown on an N.sup.+ type semiconductor substrate to form a PN junction between them so as to expose its circumference to the peripheral surface of the substrate. The P type layer is formed into a mesa having a tilted surface to which the circumference of the PN junction is exposed. Then an N.sup.+ type diffusion layer is disposed on the tilted mesa surface to protect the PN junction.