The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1980
Filed:
Apr. 19, 1978
Applicant:
Inventor:
Mari Kato, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 20 ;
Abstract
An N.sup.- semiconductor layer is epitaxially grown on an N.sup.+ semiconductor substrate serving as a drain region and overlaid with an N type epitaxial layer. Two opposite P.sup.+ gate regions are disposed in the surface portion of the N layer to define a channel region between them, and an N.sup.+ source region is located above the channel region. That portion of the N layer located between each gate region and the N.sup.- layer has a thickness not smaller than one-half of the channel width of the channel region.
Kato, Mari. (1980). Junction field effect transistor (U.S. Patent No. 4215356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4215356
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile