The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1980
Filed:
Jan. 08, 1979
Applicant:
Inventor:
Gideon D Amir, San Jose, CA (US);
Assignee:
American Microsystems, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365182 ; 357 55 ; 365149 ;
Abstract
A semiconductor memory core structure comprised of an array of cells each having a single IGFET device formed in a recess located on one side of a diffused bit line and directly above a buried storage capacitor. The diffused bit line forms one source or drain region while the buried storage capacitor forms the other source and drain region. With the channel and gate between the two source and drain regions located on only one sidewall of the recess, the gate to drain and bit line capacitance is reduced, thereby providing increased signal power and a higher signal level to a sense amplifier than heretofore available.