The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 1980

Filed:

Jul. 21, 1977
Applicant:
Inventors:

Takao Kawamura, Osaka, JP;

Kokichi Ishibitsu, Shiga, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B / ;
U.S. Cl.
CPC ...
219216 ; 219543 ; 346 / ;
Abstract

A silicon-semiconductor type thermal head comprising a substrate of .alpha.-alumina ceramic of single crystalline sapphire a silicon layer of high electrical resistance formed on the upper surface of the substrate and exothermic dots of low electrical resistance silicon integrally formed on the high resistance silicon layer. The silicon semiconductor type thermal head is formed by forming a substrate of .alpha.-alumina ceramic of single crystalline and sapphire, forming a high resistance layer of silicon on the .alpha.-alumina ceramic, forming a layer of low resistance silicon on the high resistance layer of silicon and selectively etching the low and high resistance silicon layers to produce exothermic dots of low resistance silicon, separated from the substrate by high resistance silicon.


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