The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1980
Filed:
Jun. 29, 1978
Applicant:
Inventors:
Manabu Wataze, Amagasaki, JP;
Kazuhisa Takahashi, Amagasaki, JP;
Saburo Takamiya, Amagasaki, JP;
Shigeru Mitsui, Amagasaki, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 16 ; 357 30 ;
Abstract
An avalanche photodiode comprises a photo-electric conversion region made of a semiconductor having an energy band gap smaller than the photon energy and a carrier multiplying region made of a semiconductor that differs from the semiconductor of the photo-electric conversion region. The different semiconductors for imparting superior functions to the regions are used to improve the quantum efficiency in the photo-electric conversion region and to decrease noise in the carrier multiplying region.