The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1980
Filed:
Sep. 29, 1978
Melvyn E Cowher, Sturbridge, MA (US);
Thomas O Sedgwick, Mohegan Lake, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A chemical vapor deposition (CVD) process is described for depositing magnetic oxides, such as garnets, having growth induced anisotropy sufficient to support stable bubble domains, even in very thin films. Organometallic source compounds are used together with low growth temperatures less than 900.degree. C. and high nozzle velocities in the range of 200-600 cm/sec. at room temperature. The oxidant gas mixture contains about 30-50 mol percent O.sub.2, rather than approximately 100 mol percent O.sub.2, as is usually used in CVD processes for depositing magnetic garnet films. The gas flow is transverse to the plane of the substrate onto which deposition is to occur, and is preferably perpendicular to the plane of the substrate. The individual source compounds are volatilized and carried by an inert gas, combined, then pre-mixed with oxygen in a nozzle without reaction at about 200.degree.-300.degree. C. The gas mixture is then passed at high velocity (200-600 cm/sec) onto a heated substrate. A novel nozzle-substrate arrangement is used which produces a favorable flow pattern and allows the source gas to be mixed with oxygen just immediately before it strikes the hot substrate. This yields optimum thickness and composition control for the particular substrate geometry used.