The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1980
Filed:
Dec. 05, 1978
Yutaka Mihashi, Itami, JP;
Josuke Nakata, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A process for preparing heat sensitive semiconductor switch which switches from OFF state to ON state at relatively low temperature. In a heat sensitive thyristor having PNPN four layer structure, an N type base region is exposed at one part of the surface exposed part in the P type base region to form an opening and ions of a P type impurity such as boron, aluminum and gallium are implanted from the opening to form a part having a large leakage current in a collector junction under excellent control, and to provide lower switching temperature for switching from the OFF state to the ON state with high reproducibility.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile