The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1980
Filed:
Jan. 31, 1978
Applicant:
Inventors:
Tomoyuki Tanaka, Hitachi, JP;
Masahiro Okamura, Hitachi, JP;
Toshikatsu Shirasawa, Hitachi, JP;
Takuzo Ogawa, Hitachi, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C03C / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 23 ; 357 29 ; 357 91 ;
Abstract
The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.