The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1980
Filed:
Nov. 22, 1977
Terumoto Nonaka, Hamamatsu, JP;
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Abstract
A field effect transistor of the type wherein the conductivity of the channel thereof is variable by injecting the minority carriers into the channel from the gate thereof, is disclosed. The channel of the transistor includes minority carrier recombination centers in such an amount that the lifetime of the minority carriers in the channel may be shortened so as to sufficiently reduce the minority carrier storage effect in the channel. The recombination centers may comprise elements such as gold doped in the channel region. This field effect transistor is hardly subject to the minority carrier storage effect and is capable of effecting a turn-off action at a markedly high speed.