The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1980
Filed:
May. 31, 1977
Applicant:
Inventor:
Joseph H Raymond, Jr, Katy, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 59 ; 357 23 ; 357 71 ; 307303 ; 307238 ;
Abstract
Integrated circuit resistor elements ideally suited for load devices in static MOS RAM cells are made in second-level polycrystalline silicon by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The cell size is reduced as the resistors can overly the first-level poly or MOS transistors. The second-level poly does not form transistor gates, so it is less critical, and an efficient layout provides a very small cell area.
Raymond, Jr, Joseph. (1980). Semiconductor integrated circuit with implanted resistor element in (U.S. Patent No. 4209716). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4209716
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile