Magneto-resistive detector for cross-tie wall memory system

Abstract

A method of and a detector for magneto-resistively reading out the information that is stored in a cross-tie wall memory system. The detector includes two current conductive elements that are positioned along and across the cross-tie wall in a magnetic film that is configured into a data track for sandwiching a plurality of memory cells therebetween. A separate current conductive element is centered over each of the sandwiched memory cells for conducting the read current drive signal out of the data track in the area of the Bloch-line, but forcing the read current drive signal through the data track in the area of the cross-tie. A stored binary 1, represented by a cross-tie, Bloch-line pair, is propagated into one end of the detector and is replicated in all of the sandwiched memory cells; conversely, a stored binary O, represented by the absence of a cross-tie, Bloch-line pair, would be replicated in all of the sandwiched memory cells. The passage of a read current drive signal between the two conductive elements would, by a magneto-resistive readout, indicate the presence, or absence, of the cross-tie, Bloch-line pairs.