The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1980
Filed:
Oct. 31, 1975
Applicant:
Inventor:
Francois A Padovani, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
427213 ; 427 86 ; 427314 ; 423348 ; 423349 ; 423350 ; 427215 ; 4272481 ;
Abstract
In the production of elemental silicon by chemical vapor deposition on a particulate seed bed, the continuous generation of seed particles for use or recycle is achieved by the maintenance of a separate, subsidiary reaction zone at a temperature which favors breakage of product particles; while a higher temperature, favorable for deposition, is maintained in the principal reaction zone. The separate reaction zones may be established in separate reactors, or in a single reactor.