The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1980
Filed:
Sep. 15, 1978
Maurice H Hanes, Murrysville, PA (US);
Earl S Schlegel, Plum Borough, PA (US);
Westinghouse Electric Corp., Pittsburgh, PA (US);
Abstract
A planar high power Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) including a substrate with an epitaxial layer on a surface thereof. A gate electrode including a strip of metal extending across a surface of the epitaxial layer and having a plurality of fingers extending therefrom along its length. The gate electrode being electrically insulated from the epitaxial layer by a layer of oxide. A source electrode in the surface of the epitaxial layer including fingers extending therefrom and interdigitating with the fingers of the gate electrode. There are p and n diffusion regions formed in the epitaxial layer except in an area under each of the gate fingers, which area remains undiffused. A drain electrode is connected to the surface of the substrate opposed to the surface upon which the epitaxial layer is deposited. During operation of the MOSFET as the blocking voltage across the transistor increases and the transistor is in the OFF state, the horizontal components of fields from the adjacent and closely spaced p-regions cancel each other so that voltage breakdown due to junction curvature is avoided.