The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1980
Filed:
Jul. 17, 1978
Applicant:
Inventors:
Assignee:
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 41 ; 357 22 ; 357 50 ; 357 55 ;
Abstract
An integrated semiconductor device including at least one first vertical-type junction field effect transistor (vertical JFET) having a triode-like unsaturated voltage-current characteristic and at least one second vertical JFET having a bipolar-transistor-like saturated voltage-current characteristic, both being integrally formed in a semiconductor body. Both the first and second vertical JFET are much similar in general arrangement to each other, thus allowing simultaneous forming thereof by the same manufacturing process, without sacrificing the good characteristics of these two types of transistors.