The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1980
Filed:
Apr. 17, 1978
Applicant:
Inventor:
Thomas Klein, Saratoga, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 41 ; 357 42 ;
Abstract
A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.