The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1980
Filed:
Aug. 02, 1977
Kenji Kawagai, Kawasaki, JP;
Shigeki Yoshida, Kawasaki, JP;
Abstract
There is provided a MOS field effect transistor circuit comprising a negative power terminal, an N-channel type field effect transistor with the substrate coupled to the negative power terminal, a diode coupled in the forward direction between the negative power terminal and the gate of the N-channel type field effect transistor, and a high-resistance resistor coupled between the junction of the diode and the gate of the N-channel type field effect transistor and an earth terminal. The variation in the threshold voltage of the N-channel type field effect transistor owing to temperature change is compensated by variation in the forward voltage of diode with the temperature change to keep constant the voltage applied to the gate of the field effect transistor, thereby securing the constant current property of the field effect transistor for temperature change.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile