The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1980
Filed:
Oct. 13, 1977
Applicant:
Inventors:
Anthony D Kurtz, Englewood, NJ (US);
Richard A Weber, Denville, NJ (US);
Assignee:
Kulite Semiconductor Products, Inc., Ridgefield, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
338-4 ; 2961 / ; 357 26 ;
Abstract
A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly.