The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1980
Filed:
May. 02, 1978
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01J / ; B01J / ; B01J / ; G01B / ;
U.S. Cl.
CPC ...
156601 ; 148175 ; 156612 ; 156613 ; 156614 ; 156D / ; 356357 ; 356358 ; 427 10 ;
Abstract
In growing on a substrate a film of substance of a similar kind to the substrate, ions are implanted into the substrate to form within the substrate a layer of substance having an optical property different from that of the substrate, and an epitaxial film is then grown. Thus, the thickness of the film can be monitored with an interference waveform appearing with its growth.
Quick Actions:
Sugawara, Katsuro. (1980). Method for monitoring thickness of epitaxial growth layer on substrate (U.S. Patent No. 4203799). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4203799
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile