The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 1980

Filed:

Jun. 29, 1978
Applicant:
Inventor:

Gurnam Singh, Willow Grove, PA (US);

Assignee:

Honeywell Inc., Minneapolis, MN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
73721 ; 73727 ; 73777 ; 338-2 ; 338-4 ;
Abstract

Each sensor consists of a spinel substrate in the form of a beam or a diaphragm which carries a pattern of a plurality of doped silicon piezoresistive resistors. The latter are formed from layers of doped silicon, each of which layers has been epitaxially grown on a corresponding surface of the spinel substrate. The spinel minimizes the occurrence of leakage currents with respect to the resistors, while cooperating with the silicon to provide a high degree of stress transmission to the resistors. The beam form of sensor is shown as the sensor member of a differential fluid pressure to electric signal transducer, wherein the sensor is deflected and strained in accordance with the differential pressure to be sensed.


Find Patent Forward Citations

Singh, Gurnam. (1980). Piezoresistive silicon strain sensors and pressure transducers (U.S. Patent No. 4203327). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4203327

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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