The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1980
Filed:
Apr. 04, 1978
Jun-Ichi Nishizawa, Sendai, JP;
Takashi Yoshida, Hamamatsu, JP;
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Abstract
In a static induction transistor of the type wherein carriers are injected from a source region to a drain region across a potential barrier induced in a current channel, and wherein the height of the potential barrier can be varied in response to a gate bias voltage applied to a gate to thereby control the magnitude of a drain current of the transistor. The product of the channel resistance R.sub.c and the true transconductance (G.sub.m) of the transistor is maintained less than one and the product of the true transconductance and the series resistance R.sub.s of the transistor is maintained greater than or equal to one in the main operative state of the transistor. The series resistance R.sub.s is the sum of a resistance of the source, a resistance from the source to the current channel, and the channel resistance from the entrance of the current channel to the position of maximum value (extrema point) of the potential barrier in the current channel. This static induction transistor has the advantage that the current-voltage characteristic curve is nearly linear over a very wide range of drain current including the low drain current region.