The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1980
Filed:
Nov. 28, 1978
Applicant:
Inventors:
Wojciech Rosnowski, Summit, NJ (US);
John M Neilson, Mountaintop, PA (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148188 ; 148187 ;
Abstract
Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250.degree. C., depositing a silicon overlayer over said aluminum layer at a temperature less than about 250.degree. C. and raising the temperature of said structure to between 900.degree. C. and 1300.degree. C. to cause the aluminum to diffuse into said monocrystalline silicon.