The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1980
Filed:
May. 22, 1978
Jiri Janata, Salt Lake City, UT (US);
University of Utah, Salt Lake City, UT (US);
Abstract
A field-effect transistor structure is utilized for detecting the concentration of oxygen in a substance to which the structure is exposed. The structure includes a semi-conductor substrate material having one doping polarity, a pair of spaced apart diffusion regions located at the surface of the substrate material and having a doping polarity opposite that of the substrate material, electrical insulator material overlying the diffusion regions and the surface of the substrate material lying therebetween, a membrane composed of an oxygen binding material overlying at least a portion of the insulator material, and a reference electrode connected in circuit with the diffusion regions and the substrate material. When the membrane is exposed to a substance containing oxygen, the work function of the membrane is changed and this change affects the conductivity between the two diffusion regions which may be measured to yield an indication of the concentration of oxygen in the substance.