The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 1980

Filed:

May. 30, 1978
Applicant:
Inventor:

Daniel D Culmer, Sunnyvale, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ; H01L / ;
U.S. Cl.
CPC ...
307251 ; 3072 / ; 307304 ; 357 23 ; 357 41 ;
Abstract

A MOSFET switching device, including first and second control terminals; a first MOSFET having its gate connected to the first control terminal; a second MOSFET having its gate connected to the second control terminal and its source and drain both connected to the source of the first MOSFET; and a third MOSFET having its gate connected to the second control terminal and its source and drain both connected to the drain of the first MOSFET. When complementary control signals are applied to the first and second control terminals, charge spikes occurring at the source and drain of the first MOSFET when the conduction state of the first MOSFET is changed are cancelled by charge spikes occurring simultaneously in the second and third MOSFET's.


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