The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 1980
Filed:
Dec. 18, 1978
Carlo H Sequin, Berkeley, CA (US);
Edward J Zimany, Jr, Morristown, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
The source-drain resistance of an MOS load transistor (M.sub.2) is linearized by means of a pair of properly designed auxiliary MOS transistors (M.sub.3 and M.sub.4) whose source-drain paths are electrically coupled (conductively or through an amplifier) with the load transistor (M.sub.2). The gate electrode of the load transistor (M.sub.2) is connected to the common node point (N.sub.34) between the auxiliary transistors (M.sub.3 and M.sub.4); whereas the transconductances (.beta..sub.3 and .beta..sub.4) of the auxiliary transistors (M.sub.3 and M.sub.4) are designed such that during operation the resulting feedback signal from the common node point (N.sub.34) to the gate electrode of the load transistor (M.sub.2) reduces its nonlinearity.