The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 1980
Filed:
May. 25, 1978
Derek T Cheung, Thousand Oaks, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A plurality of metal deposits are formed on the insulated surface of a semiconductive material to create an array of capacitive photodetectors. A plurality of metal columns connect the metal deposit of each photodetector to a corresponding metal deposit on the insulated surface of a silicon charge-coupled device (CCD). In this manner, the voltage signal generated in each photodetector is capacitively coupled to the charge-coupled device. The metal deposit on the CCD forms a gate for a fill/spill circuit which provides the input to the charge-coupled device. In a preferred embodiment, a bi-polar fill/spill circuit is used to provide an input to the CCD which is proportional to the change in voltage of a photodetector during a predetermined clocking period.