The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1980
Filed:
Jul. 03, 1978
William C Niehaus, Murray Hill, NJ (US);
Stuart H Wemple, Chatham Township, Morris County, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Disclosed are unipolar semiconductor devices such as, e.g., metal-semiconductor field effect transistors. The disclosed devices comprise an n- or p-type active layer on a substrate and a drain contact on the active layer. The active layer comprises two contiguous regions, namely a first, more heavily doped region which is in contact with the drain contact and a second, less heavily doped region which in a direction perpendicular to the active layer extends through the remainder of the active layer. In the disclosed configuration the more heavily doped region extends past the edge of the drain contact towards a source of free carriers such as e.g., a source contact. Devices incorporating such configuration of regions in the active layer are more resistant to burnout and are capable of operating at higher voltage and power levels.