The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1980
Filed:
Aug. 04, 1976
Marius Fullmann, Neu-Isenburg, DE;
Friedhelm Sawitzki, Frankfurt am Main, DE;
Dieter Silber, Hausen, DE;
Licentia Patent-Verwaltungs-G.m.b.H., Frankfurt, DE;
Abstract
A gate turn-off thyristor device including a gate turn-off main thyristor and a gate turn-off auxiliary thyristor, each having an emitter, a control base, a main base and a counter-emitter, integrated in a semiconductor body including three zones of alternatingly opposite conductivity type. The three zones of the semiconductor body are each divided into two regions to provide the counter-emitter, main base and control base zones of the two thyristors, while the emitter zones of the main thyristor and of the auxiliary thyristor are separate zones formed in the respective associated regions constituting the control base zones of the respective thyristors. The two counter-emitter zones of the two thyristors are commonly contacted, and the two regions of at least one of the zones of the semiconductor body are doped differently so that the turn-off gain of the main thyristor is greater than the turn-off gain of the auxiliary thyristor and the holding current of the auxiliary thyristor is smaller than the holding current of the main thyristor.