The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1980
Filed:
Apr. 02, 1979
Raymond Dingle, Summit, NJ (US);
Arthur C Gossard, Warren, NJ (US);
Horst L Stormer, New Providence, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plurality of wider bandgap semiconductor layers (14) interleaved with and contiguous with the first plurality. The wide bandgap and narrow bandgap layers are substantially lattice-matched to one another, and the wide bandgap layers are doped such that the impurity concentration-thickness product therein is greater than the same product in the narrow bandgap layers. The fabrication of the structure by MBE to enhance the mobility of GaAs is specifically described. In this case, the narrow bandgap layers (12) comprise GaAs and are unintentionally doped to about 10.sup.14 /cm.sup.3, whereas the wide bandgap layers (14) comprise AlGaAs doped n-type to about 10.sup.16 to 10.sup.18 /cm.sup.3. The incorporation of this structure in an FET is also described.