The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 1980

Filed:

Nov. 11, 1977
Applicant:
Inventor:

Helmuth Haberhauer, Taunusstein, DE;

Assignee:

Hoechst Aktiengesellschaft, Frankfurt am Main, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G / ;
U.S. Cl.
CPC ...
118657 ; 118651 ;
Abstract

An apparatus for developing latent electrostatic images in an electrophotographic copier are disclosed, the developer including an image carrier having a conductive backing layer and a photoconductive layer, a magnetic brush developer, a voltage source connected with the magnetic brush developer, and a high-ohmic resistance connecting the backing layer with ground, the voltage source and high-ohmic resistance establishing a potential difference between the magnetic brush developer and the backing layer to prevent a voltage breakdown at the image carrier which may result in undesirable streaking and fogging of an electrostatic copy. The high-ohmic resistance may be adjusted in accordance with the amount of current generated in the developer mixture whereby the flow of current from the developer through the photoconductive layer to the backing layer is impeded to prevent a voltage breakdown. In a first embodiment, the image carrier is a planar printing plate. In a second embodiment, the image carrier is a cylindrical drum having the photoconductive layer arranged on its outer peripheral surface, with charge and transfer coronas arranged adjacent the photoconductive surface, and the embodiment includes a semiconductor unit connected in parallel with the high-ohmic resistance.


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