The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1980
Filed:
Aug. 25, 1977
Applicant:
Inventors:
Katunobu Awane, Ikoma, JP;
Hironori Hattori, Suita, JP;
Tetuo Biwa, Osaka, JP;
Hiroshi Tamaki, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 41 ; 3151693 ; 357 13 ; 357 53 ; 357 89 ; 357 23 ;
Abstract
High voltage diffusion-self-alignment metal oxide semiconductor devices and control logic circuitry therefor are integrated in a single semiconductor body. The integrated semiconductor device includes a considerably large number of output terminals compared to the number of input terminals. The output terminals develop signals of high voltages derived from the high voltage diffusion-self-alignment metal oxide semiconductor devices which are positioned at a peripheral zone of the semiconductor body.