The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1980
Filed:
Nov. 20, 1978
Donald G Craycraft, Spring Valley, OH (US);
NCR Corporation, Dayton, OH (US);
Abstract
An FET read-only memory cell capable of storing more than one bit per cell. The channel geometry of the FET cell is selected to provide an electrical output that is characteristic of a predetermined combination of bits. For example, the FET channel width can be selected to provide one of 2.sup.n predetermined output voltage values which correspond to the 2.sup.n possible arrangements of n bits. The read function utilizes 2.sup.n -1 sense amplifiers, which are connected to the FET. Each sense amplifier is selectively activated at a separate one of 2.sup.n -1 voltage levels which is intermediate two adjacent values of the 2.sup.n output voltages. The collective outputs of the sense amplifiers drive a logic circuit for decoding the values of the n data bits represented by the FET channel width.