The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1980
Filed:
May. 01, 1978
Paul L Garbarino, Ridgefield, CT (US);
Martin Revitz, Poughkeepsie, NY (US);
Joseph F Shepard, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a dielectric layer of reflowed phosphosilicate glass (PSG) on top surfaces of a polycrystalline silicon layer which may be doped by phosphorous impurities diffusing from the PSG.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile